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BSIMSOI - Version 4.3 is officially released

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Sunday, 03 January 2010 22:53

BSIMSOI is an international standard model for SOI (Silicon-On-Insulator) circuit design. This model is formulated on top of the BSIM3 framework. It shares the same basic equations with the bulk model so that the physical nature and smoothness of BSIM3v3 are retained. Most parameters related to general MOSFET operation (non-SOI specific) are directly imported from BSIM 3v3 to ensure parameter compatibility. BSIMSOI was selected by EIA (Electronic Industries Alliance) Compact Model Council (CMC) as the standard SOI MOSFET model in December 2001. BSIMSOIv4.3 source code was extensively revised, improved and bug fixed through close interactions among the members (e.g. companies ADI, Agilent, Ansoft, Cadence, IBM, SYNOPSYS and UC Berkeley) of a forum devoted to resolve the key issues in BSIMSOIv4.2 and 33 bugs has been fixed, e.g.:

  • Fixed bug in dervative T2 variable (missing 25.0 multiplier when agbcp2>0);
  • Fixed discontinuity reported by Cadence on b4soild.c file;
  • Fixed bug in dVgsteff2_dVd on b4soild.c file;
  • Fixed missing initializations of Csg2,Csd2,Csb2;
  • ...and so on!
BSIMSOIv4.3 source code was extensively revised, improved and bug fixed through
close interactions among the members of a forum devoted to resolve the key
issues in BSIMSOIv4.2.
 

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